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DS_K6F8016U6B Datenblatt (PDF) - Samsung semiconductor

DS_K6F8016U6B Datasheet PDF - Samsung semiconductor
Teilenummer DS_K6F8016U6B
Download  DS_K6F8016U6B Download
Filegröße   157.37 Kbytes
Page   9 Pages
Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Bauteilbeschribung 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

DS_K6F8016U6B Datasheet (PDF)

Go To PDF Page Download Datenblatt
DS_K6F8016U6B Datasheet PDF - Samsung semiconductor

Teilenummer DS_K6F8016U6B
Download  DS_K6F8016U6B Click to download

Filegröße   157.37 Kbytes
Page   9 Pages
Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Bauteilbeschribung 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

DS_K6F8016U6B Datenblatt (HTML) - Samsung semiconductor


DS_K6F8016U6B Produktdetails

GENERAL DESCRIPTION
The K6F8016U6B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES
• Process Technology: Full CMOS
• Organization: 512K x16
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TBGA-6.00x7.00




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