Description
Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets.

Features
■ Optimized for sustain and energy recovery circuits in PDP applications.
■ State-of-the-art STripFET™ technology
■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2)
■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency
■ High repetitive peak current capability