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LM3641 Datenblatt (PDF) - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
LM3641 Datasheet PDF - National Semiconductor (TI)
Teilenummer LM3641
Download  LM3641 Download
Filegröße   304.04 Kbytes
Page   16 Pages
Hersteller  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)
Bauteilbeschribung Lithium-Ion Battery Pack Protection Circuit

LM3641 Datasheet (PDF)

Go To PDF Page Download Datenblatt
LM3641 Datasheet PDF - National Semiconductor (TI)

Teilenummer LM3641
Download  LM3641 Click to download

Filegröße   304.04 Kbytes
Page   16 Pages
Hersteller  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)
Bauteilbeschribung Lithium-Ion Battery Pack Protection Circuit

LM3641 Datenblatt (HTML) - National Semiconductor (TI)


LM3641 Produktdetails

General Description
The LM3641 Lithium Protection Integrated Circuit resides inside a 3.6V Lithium-Ion battery pack consisting of a single
cell or multiple parallel cells. The IC controls the ON/OFF
state of a pair of low threshold N-channel power MOSFETs
placed in series with the battery cell(s). The purpose of this
MOSFET pair is to protect the cell(s) from inadvertent electrical over-stress. The IC compares the cell voltage against
internally programmed minimum and maximum limits. Transient voltage faults of approximately 1.25 seconds are tolerated.
The IC also monitors the bi-directional current flow in the battery pack by measuring the voltage across a robust 4 mΩ
current sensing resistor internal to the protection IC package. The IC turns OFF the MOSFET pair whenever any fault
limit is exceeded. Momentary current surges <4 ms are tolerated.
The Enable pin allows external ON/OFF control of the MOSFET pair and resets the IC after the MOSFET pair is turned
OFF and the pack is safe to operate again.
The limits for overcharge and overdischarge voltage, as well
as independent limits for each direction of overcurrent are
factory adjusted employing EEPROM.

Features
- Automatic battery disconnect when the cell is
over-charged or over-discharged.
- Maximum cell voltage for MOSFET conduction is factory
programmable between 4.0V and 4.4V with a ±25 mV
tolerance (0˚C to +60˚C).
- Minimum cell voltage for MOSFET conduction =
0.57•VMAX ±3.5% (0˚C to +60˚C).
- Internal 4 mΩ current sense resistor provides ±0.5A
maximum accuracy for detection of overcurrent faults.
The maximum charge and discharge current is factory
programmable between 1A and 5A. A single overcurrent
fault event opens and protects the MOSFET pair.
- Automatic detection of safe pack conditions for recovery
(MOSFET pair ON) from a fault condition (over/under
discharged or overcurrent).
- Average current drain = 1.2 µA typical.
- Optional Enable pack terminal can be used to prevent
accidental short circuit of pack and for maximizing the
shelf life of the pack (IC powers down when the pack is
not in use).
- Over-current events cause connection of an internal
50 kΩ “FET-Bypass” resistance across OFF MOSFET
pair. Loads >3–7 MΩ are required for return to
conduction mode.
- Over-charged states cause connection ofa5kΩ
“Cell-Bypass” resistor to ensure that the cell is not
allowed to be overcharged by leakage paths.




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Über National Semiconductor (TI)


National Semiconductor war eine amerikanische Halbleiterfirma, die 1959 gegründet wurde.
Das Unternehmen war bekannt für seine Innovationen im Bereich analoger und gemischter Signal-integrierter Schaltkreise und war ein führender Anbieter von Produkten für Leistungsmanagement- und Datenkonversionsprodukte.
Die Produkte von National Semiconductor wurden in einer Vielzahl von Anwendungen verwendet, darunter Unterhaltungselektronik, Industrie, Automobil und Telekommunikation.
Das Unternehmen wurde 2011 von Texas Instruments übernommen und seine Produkte und Technologien wurden weiterhin unter der Marke Texas Instruments entwickelt und verkauft.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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