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DS_K6F2008U2E Datenblatt (PDF) - Samsung semiconductor
DS_K6F2008U2E Datasheet PDF - Samsung semiconductor
Teilenummer DS_K6F2008U2E
Download  DS_K6F2008U2E Download
Filegröße   130.93 Kbytes
Page   10 Pages
Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Bauteilbeschribung 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

DS_K6F2008U2E Datasheet (PDF)

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DS_K6F2008U2E Datasheet PDF - Samsung semiconductor

Teilenummer DS_K6F2008U2E
Download  DS_K6F2008U2E Click to download

Filegröße   130.93 Kbytes
Page   10 Pages
Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Bauteilbeschribung 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

DS_K6F2008U2E Datenblatt (HTML) - Samsung semiconductor


DS_K6F2008U2E Produktdetails

GENERAL DESCRIPTION
The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.

FEATURES
• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F, 48(36)-TBGA-6.00x7.00




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