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DS_K7N803645B Datenblatt (PDF) - Samsung semiconductor

DS_K7N803645B Datasheet PDF - Samsung semiconductor
Teilenummer DS_K7N803645B
Download  DS_K7N803645B Download
Filegröße   379.85 Kbytes
Page   18 Pages
Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Bauteilbeschribung 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM

DS_K7N803645B Datasheet (PDF)

Go To PDF Page Download Datenblatt
DS_K7N803645B Datasheet PDF - Samsung semiconductor

Teilenummer DS_K7N803645B
Download  DS_K7N803645B Click to download

Filegröße   379.85 Kbytes
Page   18 Pages
Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Bauteilbeschribung 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM

DS_K7N803645B Datenblatt (HTML) - Samsung semiconductor


DS_K7N803645B Produktdetails

GENERAL DESCRIPTION
The K7N803601B and K7N801801B are 9,437,184 bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.

FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data contention .
• Α interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A
• Operating in commercial and industrial temperature range.




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