IPB60R060C7 pdf, IPB60R060C7 Bauteilbeschribung, IPB60R060C7 Datenblatt, IPB60R060C7 view ::: ALLDATASHEET :::

Teilenummer	IPB60R060C7

Bauteilbeschribung	CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

Filegröße	1399.5 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

Ähnliche Beschreibung - IPB60R060C7

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	SPP17N80C3	401Kb / 10P	CoolMOS Power Transistor Features New revolutionary high voltage technology Rev. 2.9 2008-10-15
	IPB65R045C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-18
	IPB65R225C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-18
	IPL65R130C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-29
	IPL65R230C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-29
	IPP65R045C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-18
	IPP65R225C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-18
	IPW65R019C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.1
	IPZ65R019C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0
	IPB60R120C7	1Mb / 15P	CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Rev.2.0,2015-11-30