SCTH35N65G2V-7 pdf, SCTH35N65G2V-7 Bauteilbeschribung, SCTH35N65G2V-7 Datenblatt, SCTH35N65G2V-7 view ::: ALLDATASHEET :::

Teilenummer	SCTH35N65G2V-7

Bauteilbeschribung	Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package

Filegröße	378.86 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

Ähnliche Beschreibung - SCTH35N65G2V-7

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	SCT040H65G3SAG	227Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package 14-Feb-2022
	SCTH35N65G2V-7AG	620Kb / 15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 24-Jan-2020
	SCTW35N65G2VAG	206Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package 09-Sep-2020
	SCTWA35N65G2VAG	243Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package 11-Aug-2020
	SCT018H65G3AG	390Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package 07-Oct-2022
	SCT025H120G3AG	369Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package 28-Nov-2022
	SCT040H65G3AG	389Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package 21-Jan-2022
	SCTH100N120G2-AG	439Kb / 14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 23-Jul-2020
	SCTH60N120G2-7AG	356Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package 02-Aug-2021