SSG4841P pdf, SSG4841P Bauteilbeschribung, SSG4841P Datenblatt, SSG4841P view ::: ALLDATASHEET :::

Teilenummer	SSG4841P

Bauteilbeschribung	P-Channel MOSFET uses advanced trench technology

Filegröße	1301.37 Kbytes

Html View	1 2 3 4

Hersteller	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

Logo

Ähnliche Teilenummer - SSG4841P

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
SeCoS Halbleitertechnol...	SSG4841P	174Kb / 2P	P-Ch Enhancement Mode Power MOSFET
VBsemi Electronics Co.,...	SSG4841P	1Mb / 9P	P-Channel 40 V (D-S) MOSFET
SeCoS Halbleitertechnol...	SSG4841P	151Kb / 2P	P-Ch Enhancement Mode Power MOSFET

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
SHENZHEN DOINGTER SEMIC...	AO4771	1Mb / 6P	P-Channel MOSFET uses advanced trench technology
	AOI409	1Mb / 4P	P-Channel MOSFET uses advanced trench technology
	AP3801GM-HF	935Kb / 5P	P-Channel MOSFET uses advanced trench technology
	AP9561AGM-HF	537Kb / 4P	P-Channel MOSFET uses advanced trench technology
	CEM4311	1Mb / 6P	P-Channel MOSFET uses advanced trench technology
	CJQ4435	1Mb / 4P	P-Channel MOSFET uses advanced trench technology
	STJ009	1Mb / 5P	P-Channel MOSFET uses advanced trench technology
	MTB040P04Q8	1Mb / 4P	P-Channel MOSFET uses advanced trench technology
	PE9435	1Mb / 5P	P-Channel MOSFET uses advanced trench technology
	QM3005S	1Mb / 5P	P-Channel MOSFET uses advanced trench technology