| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Shenzhen Huazhimei Semi... |
HM30P03Q
|
1Mb / 4P |
-30VDS竊뤒?0VGS竊?30A(ID) P-Channel Enhancement Mode MOSFET
|
 KIA Semiconductor Techn... |
20N40H
|
445Kb / 7P |
20A竊?00V N-CHANNEL MOSFET
|
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24N50H
|
290Kb / 5P |
24A竊?00V N-CHANNEL MOSFET
|
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28N50H
|
347Kb / 5P |
28A竊?00V N-CHANNEL MOSFET
|
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1N60H
|
47Kb / 3P |
1A竊?00V N-CHANNEL MOSFET
|
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6N65H
|
281Kb / 5P |
5.5A竊?50V N-CHANNEL MOSFET
|
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3506A
|
319Kb / 6P |
70A竊?0V N-CHANNEL MOSFET
|
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3508A
|
181Kb / 6P |
70A竊?0V N-CHANNEL MOSFET
|
 Shanghai Leiditech Elec... |
LM405E
|
834Kb / 3P |
-3 0VDS竊뤒?0VGS竊? A(ID) Dual P-Channel Enhancement Mode MOSFET
|
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LM9926B
|
569Kb / 3P |
20VDS竊뤒?2VGS竊?A(ID) Dual N-Channel Enhancement Mode MOSFET
|