| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 California Eastern Labs |
NE552R479A
|
495Kb / 9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
08/11/2003 |
|
NE552R479A
|
605Kb / 7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
|
NE552R479A-T1
|
605Kb / 7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
|
NE552R479A-T1-A
|
605Kb / 7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
|
NE552R479A-T1A
|
605Kb / 7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|