6H2N-EB pdf, 6H2N-EB Bauteilbeschribung, 6H2N-EB Datenblatt, 6H2N-EB view ::: ALLDATASHEET :::

Teilenummer	6H2N-EB

Bauteilbeschribung	Double triodes, used as an low frequency power amplifier.

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Hersteller	ETC [List of Unclassifed Manufacturers]

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Ähnliche Beschreibung - 6H2N-EB

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Hitachi Semiconductor	2SJ48	192Kb / 3P	LOW FREQUENCY POWER AMPLIFIER
	2SB856	323Kb / 2P	LOW FREQUENCY POWER AMPLIFIER
	2SB1401	34Kb / 5P	Low frequency power amplifier
Fairchild Semiconductor	KSC3488	39Kb / 4P	Low Frequency Power Amplifier
Unisonic Technologies	TA8229	180Kb / 9P	LOW FREQUENCY POWER AMPLIFIER
Fairchild Semiconductor	KSA1182	58Kb / 4P	Low Frequency Power Amplifier
Unisonic Technologies	UA1029	131Kb / 7P	LOW FREQUENCY POWER AMPLIFIER
Fairchild Semiconductor	KSD880Y	64Kb / 4P	Low Frequency Power Amplifier
Fairchild Semiconductor	KSD2058YTU	51Kb / 4P	Low Frequency Power Amplifier
New Jersey Semi-Conduct...	C451PN	83Kb / 1P	TRIODES,POWER,REVERSE-BLOCKlNG:SCRS