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Teilenummer	PV-SERIES

Bauteilbeschribung	2.5 – 6.5 μm HgCdTe ambient temperature photovoltaic detectors

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Hersteller	VIGO [VIGO Photonics S.A.]

Direct Link	https://vigophotonics.com/us/

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
VIGO Photonics S.A.	PCI	695Kb / 2P	1.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoconductive detectors 08/11/2020
	PEM	737Kb / 2P	2.0 – 12.0 μm HgCdTe ambient temperature photoelectromagnetic detectors 09/11/2020
	PEMI	744Kb / 2P	2.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoelectromagnetic detectors 09/11/2020
	PV-4TE	796Kb / 2P	2.0 – 12.0 μm HgCdTe four-stage thermoelectrically cooled photovoltaic detectors 17/11/2020
	PVA	637Kb / 2P	2.4 – 5.3 μm InAs and InAsSb ambient temperature photovoltaic detectors 04/05/2022
	PVI	700Kb / 2P	2.5 – 6.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detectors 25/09/2020
	PVM-10.6-1	669Kb / 2P	2.0 – 12.0 μm HgCdTe ambient temperature photovoltaic multiple junction detector 08/11/2020
	PVM	695Kb / 2P	2.0 – 13.0 μm HgCdTe ambient temperature photovoltaic multiple junction detectors 09/11/2020
	PVMI	699Kb / 2P	2 – 12 μm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detectors 25/09/2020
	PVMQ	661Kb / 2P	2.0 – 12.0 μm HgCdTe ambient temperature photovoltaic multiple junction quadrant detector 09/11/2020