UPA508TE pdf, UPA508TE Bauteilbeschribung, UPA508TE Datenblatt, UPA508TE view ::: ALLDATASHEET :::

Teilenummer	UPA508TE

Bauteilbeschribung	MOS FET WITH SCHOTTKY BARRIER DIODE

Filegröße	382.13 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Hersteller	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Ähnliche Beschreibung - UPA508TE

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	UPA507TE	146Kb / 8P	P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
NEC	UPA508TE	144Kb / 8P	N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
Renesas Technology Corp	RJK0380DPA	254Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03L2DNS	127Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode
	RJK03L3DNS	130Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode
	RJK03N9DNS	114Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	PA1980	216Kb / 10P	P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
	PA2782GR	205Kb / 8P	SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
	UPA507TE	370Kb / 10P	MOS FET WITH SCHOTTKY BARRIER DIODE 2003
	UPA1980	215Kb / 10P	MOS FET WITH SCHOTTKY BARRIER DIODE 2003