| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
QT Optoelectronics |
H24B1
|
68Kb / 1P |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR
|
Texas Instruments |
TIL119
|
226Kb / 6P |
Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor
|
List of Unclassifed Man... |
ITR9909
|
525Kb / 9P |
An infrared Emitting Diode and an NPN silicon phototransistor
|
Everlight Electronics C... |
ITR9702
|
235Kb / 8P |
Gallium arsenide infrared emitting diode which is coupled with a silicon photo transistor in a plastic housing
|
Toshiba Semiconductor |
TLP595G
|
318Kb / 8P |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
|
TLP4592G
|
217Kb / 6P |
The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
|
ISOCOM COMPONENTS |
IS3H4
|
1Mb / 4P |
The IS3H4 is an optically coupled isolator consisting of two infrared light emitting diodes in inverse parallel and an NPN silicon photo transistor.
|
Fairchild Semiconductor |
MOC3063M
|
278Kb / 11P |
The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
|
NXP Semiconductors |
BFR520.215
|
169Kb / 14P |
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package
Rev. 4-13 September 2011 |
Honeywell Accelerometer... |
SEP8706-003
|
69Kb / 4P |
SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package
|
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