NX8341_06 pdf, NX8341_06 Bauteilbeschribung, NX8341_06 Datenblatt, NX8341

Teilenummer	NX8341

Bauteilbeschribung	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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Hersteller	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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Ähnliche Teilenummer - NX8341_06

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
California Eastern Labs	NX8341TB-AZ	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341TJ-AZ	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341TL-AZ	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341TP-AZ	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341UB-AZ	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	NX8346TB	102Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NEC	NX8346TS	89Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8369TB	213Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8369TB	214Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8346TS	195Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8346TB	205Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349YK	253Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349TB	204Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION