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Teilenummer	F1002

Bauteilbeschribung	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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Hersteller	POLYFET [Polyfet RF Devices]

Direct Link	http://www.polyfet.com

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Ähnliche Beschreibung - F1002

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Polyfet RF Devices	F1021	38Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
	F1058	38Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
	F1060	38Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
	F1081	40Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???
	F1170	43Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???
	F1240	41Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?
	F1260	38Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?
	F1401	42Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?
	F1520	36Kb / 2P	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?
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