30J101 pdf, 30J101 Bauteilbeschribung, 30J101 Datenblatt, 30J101 view ::: ALLDATASHEET :::

Teilenummer	30J101

Bauteilbeschribung	Silicon N Channel IGBT High Power Switching Applications

Filegröße	193.83 Kbytes

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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Ähnliche Beschreibung - 30J101

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Toshiba Semiconductor	GT10J303	473Kb / 7P	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
	GT10Q101	179Kb / 6P	Silicon N Channel IGBT High Power Switching Applications
	GT15J321	195Kb / 7P	Silicon N Channel IGBT High Power Switching Applications
	GT15J331	222Kb / 7P	Silicon N Channel IGBT High Power Switching Applications
	GT15Q102	189Kb / 6P	Silicon N Channel IGBT High Power Switching Applications
	GT15Q301	493Kb / 7P	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
	GT20J301	491Kb / 7P	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
	GT20J321	197Kb / 7P	Silicon N Channel IGBT High Power Switching Applications
	GT25Q102	186Kb / 6P	Silicon N Channel IGBT High Power Switching Applications
	GT50J325	198Kb / 7P	Silicon N Channel IGBT High Power Switching Applications