SG8410WN pdf, SG8410WN Bauteilbeschribung, SG8410WN Datenblatt, SG8410WN view ::: ALLDATASHEET :::

Teilenummer	SG8410WN

Bauteilbeschribung	1200V 25A Insulated Gate Bipolar Transistor

Filegröße	958.21 Kbytes

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Hersteller	ROHM [Rohm]

Direct Link	http://www.rohm.com

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Ähnliche Beschreibung - SG8410WN

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
International Rectifier	IRGPH50F	267Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)
International Rectifier	IRGPH50FD2	431Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A)
Rohm	MG6307WZ	246Kb / 4P	650V 25A Insulated Gate Bipolar Transistor
	MG7210WZ	270Kb / 4P	1200V 25A Insulated Gate Bipolar Transistor 2019.08 - Rev.A
	MG7109WZ	852Kb / 5P	650V 25A Insulated Gate Bipolar Transistor 2021.09 - Rev.A
	MG7212WZ	1Mb / 5P	1200V 50A Insulated Gate Bipolar Transistor 2021.08 - Rev.A
	MG7213WZ	1Mb / 5P	1200V 75A Insulated Gate Bipolar Transistor 2021.08 - Rev.A
	MG7214WZ	1Mb / 5P	1200V 100A Insulated Gate Bipolar Transistor 2023.01 - Rev.A
	MG7215WZ	1Mb / 5P	1200V 150A Insulated Gate Bipolar Transistor 2023.01 - Rev.A
	MG7216WZ	1Mb / 5P	1200V 200A Insulated Gate Bipolar Transistor 2023.01 - Rev.A