AP30G120SW pdf, AP30G120SW Bauteilbeschribung, AP30G120SW Datenblatt, AP30G120SW view ::: ALLDATASHEET :::

Teilenummer	AP30G120SW

Bauteilbeschribung	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD

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Hersteller	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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Ähnliche Beschreibung - AP30G120SW

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Microsemi Corporation	PPNGZ52F120A	102Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electron...	AP25G45GEM	69Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	AP05G120SW-HF	59Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
	AP20GT60P-HF	65Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	AP30G40GEO-HF	60Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	AP30G120ASW	103Kb / 4P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
	AP30G120BSW-HF	104Kb / 4P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
	AP30G120CSW-HF	104Kb / 4P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
	AP30G120SW	93Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
	AP40G120W	99Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR