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Teilenummer	V80100P

Bauteilbeschribung	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.425 V at IF = 10 A

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Hersteller	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Ähnliche Teilenummer - V80100P

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	V80100PW	84Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 09-Feb-10
	V80100PW-M3-4W	84Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 09-Feb-10
	V80100PW	83Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 10 A 20-Dec-13
	V80100PW	81Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 20-Dec-13

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	V30200C	158Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A 31-Jul-08
	V40100G	167Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 19-May-08
	V40100PG	106Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF = 5 A 26-May-08
	V50100P	103Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A 26-May-08
	V60H150PW-M3	94Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A 04-Dec-13
	V80H150PW-M3	94Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 10 A 04-Dec-13
	V60170PW-M3	94Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A 04-Dec-13
	V80170PW-M3	94Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 10 A 04-Dec-13
	VT6045C-M3	135Kb / 5P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A 15-Dec-16