| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Toshiba Semiconductor |
2SA1316
|
225Kb / 4P |
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
|
|
2SA1349
|
223Kb / 3P |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPL
|
|
2SC3324
|
218Kb / 3P |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
|
2SC3329
|
208Kb / 4P |
NPN EPITAXIAL TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HIAD AMPLIFIERS)
|
|
2SC3665
|
152Kb / 2P |
NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
|
2SC5052
|
88Kb / 1P |
NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
|
2SC732TM
|
211Kb / 3P |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Fairchild Semiconductor |
KSA910
|
40Kb / 4P |
Driver Stage Of Audio Amplifier & High Voltage Switching Applications
|
Toshiba Semiconductor |
2SC3324
|
663Kb / 5P |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
|
NTE Electronics |
NTE1223
|
75Kb / 2P |
Integrated Circuit Low Noise High Gain Pre−Amplifier Circuit For General Purpose Audio Pre−Amplifiers
|
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