MAPLST2122-030CF pdf, MAPLST2122-030CF Bauteilbeschribung, MAPLST2122-030CF Datenblatt, MAPLST2122-030CF view ::: ALLDATASHEET :::

Teilenummer	MAPLST2122-030CF

Bauteilbeschribung	LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V

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Hersteller	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

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Ähnliche Beschreibung - MAPLST2122-030CF

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PTF210301	337Kb / 8P	LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz 2003-12-22
	PTF210901	266Kb / 8P	LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz 2004-01-16
	PTF211301	449Kb / 9P	LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz 2004-01-02
Tyco Electronics	MAPLST2122-015CF	238Kb / 5P	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
	MAPLST2122-030CF	162Kb / 5P	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
	MAPLST2122-060CF	172Kb / 5P	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
	MAPLST2122-090CF	164Kb / 5P	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
M/A-COM Technology Solu...	MAPLST1617-030CF	182Kb / 6P	LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
Infineon Technologies A...	PTFA210701E	387Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
Infineon Technologies A...	PTFA210301E	198Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz Rev. 03, 2008-03-04