TIP105 pdf, TIP105 Bauteilbeschribung, TIP105 Datenblatt, TIP105 view ::: ALLDATASHEET :::

Teilenummer	TIP105

Bauteilbeschribung	PNP (HIGH DC CURRENT GAIN MIN

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Hersteller	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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Ähnliche Teilenummer - TIP105

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Mospec Semiconductor	TIP105	200Kb / 4P	POWER TRANSISTORS(8A,60-100V,80W)
Motorola, Inc	TIP105	218Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP105	218Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 7
Power Innovations Ltd	TIP105	152Kb / 6P	PNP SILICON POWER DARLINGTONS
STMicroelectronics	TIP105	35Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Oct-1999

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Samsung semiconductor	TIP145F	175Kb / 4P	PNP (HIGH DC CURRENT GAIN)
Inchange Semiconductor ...	2SB1531	101Kb / 2P	High DC Current Gain- : hFE= 5000(Min)@IC= -5A
	2SB881	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A
	2SB882	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -5A
	2SB883	84Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -7A
	2SB897	93Kb / 2P	High DC Current Gain- : hFE = 1000(Min)@ IC= -10A
	2SB955	101Kb / 2P	High DC Current Gain- : hFE = 1000(Min)@ IC= -5A
	2SC4005	198Kb / 2P	High DC current gain.
Unisonic Technologies	BD135G-XX-AA3-R	121Kb / 3P	high DC current gain
Unisonic Technologies	NP1510G-XX-AN6-R	122Kb / 3P	High DC current gain