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Teilenummer	BFR35AP

Bauteilbeschribung	NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

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Hersteller	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Siemens Semiconductor G...	BFP181	60Kb / 7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
	BFP181R	58Kb / 7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
	BFP93A	60Kb / 7P	NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
	BFR93AW	57Kb / 7P	NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
	BFS17P	48Kb / 5P	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
	BFS17S	55Kb / 5P	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
	BFS17W	34Kb / 5P	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
	BFT92	57Kb / 7P	PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
	BFT92W	56Kb / 7P	PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
	BFT93	58Kb / 7P	PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA)