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Teilenummer	BSP280

Bauteilbeschribung	IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)

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Hersteller	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Siemens Semiconductor G...	BUP200	300Kb / 7P	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
	BUP202	381Kb / 7P	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free)
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	BUP304	378Kb / 7P	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
	BUP307	343Kb / 7P	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
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Sanyo Semicon Device	2SK2618LS	9Kb / 1P	N- Channel MOS Silicon FET Very High-Speed Switching Applications
Sanyo Semicon Device	FTD2003	15Kb / 1P	N- Channel Silicon MOS FET Very High Speed-Switchng