UK3018G-AE2-R pdf, UK3018G-AE2-R Bauteilbeschribung, UK3018G-AE2-R Datenblatt, UK3018G-AE2-R view ::: ALLDATASHEET :::

Teilenummer	UK3018G-AE2-R

Bauteilbeschribung	2.5V DRIVE SILICON N-CHANNEL MOSFET

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Hersteller	UTC [Unisonic Technologies]

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Zetex Semiconductors	ZXMN3B14F	204Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
	ZXMN3B04N8	176Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
	ZXMN3B01F	475Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
Diodes Incorporated	ZXMN3B01F	475Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE DECEMBER 2005
	ZXMN3B04N8	172Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE MAY 2004
	ZXMN3B14F	222Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE JANUARY 2006
Unisonic Technologies	UK3019	133Kb / 3P	2.5V DRIVE SILICON N-CHANNEL MOSFET
Diodes Incorporated	ZXMN3B01F	475Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE DECEMBER 2005
Unisonic Technologies	UK3018BW	138Kb / 3P	DRIVE SILICON N-CHANNEL MOSFET
ZP Semiconductor	ZXMN3B01F	185Kb / 3P	30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE