2SC5509-T2-A pdf, 2SC5509-T2-A Bauteilbeschribung, 2SC5509-T2-A Datenblatt, 2SC5509-T2-A view ::: ALLDATASHEET :::

Teilenummer	2SC5509-T2-A

Bauteilbeschribung	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

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Hersteller	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Ähnliche Beschreibung - 2SC5509-T2-A

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Siemens Semiconductor G...	BFP450	49Kb / 8P	NPN Silicon RF Transistor (For medium power amplifiers)
Siemens Semiconductor G...	BFR34R	90Kb / 4P	NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS
Advanced Semiconductor	NE64535	18Kb / 2P	NPN SILICON LOW NOISE RF TRANSISTOR REV. A
Siemens Semiconductor G...	2N6620	90Kb / 4P	NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER
Advanced Semiconductor	ALN64535	21Kb / 1P	NPN SILICON LOW NOISE RF TRANSISTOR
Advanced Semiconductor	ALN68135	21Kb / 1P	NPN SILICON LOW NOISE RF TRANSISTOR
California Eastern Labs	2SC5752	3Mb / 17P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
California Eastern Labs	2SC5754	1Mb / 12P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
Renesas Technology Corp	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION July 2001
Renesas Technology Corp	2SC5800	109Kb / 24P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE July 2001