MJ10008 pdf, MJ10008 Bauteilbeschribung, MJ10008 Datenblatt, MJ10008 view ::: ALLDATASHEET :::

Teilenummer	MJ10008

Bauteilbeschribung	NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

Filegröße	101.12 Kbytes

Html View	1 2

Hersteller	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

Direct Link	http://www.njsemi.com

Logo

Ähnliche Teilenummer - MJ10008

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Mospec Semiconductor	MJ10008	189Kb / 4P	POWER TRANSISTORS(20A,400-500V,175W)
Boca Semiconductor Corp...	MJ10008	196Kb / 4P	SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
American Microsemicondu...	MJ10008	769Kb / 2P	NPN Silicon Power Darlington Transistor

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NTE Electronics	NTE99	27Kb / 3P	Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
Boca Semiconductor Corp...	MJ10004	189Kb / 4P	SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
	MJ10006	197Kb / 4P	SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE
	MJ10008	196Kb / 4P	SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
Inchange Semiconductor ...	2SD2560	137Kb / 3P	Silicon NPN Darlington Power Transistors
Savantic, Inc.	2SD2386	127Kb / 3P	Silicon NPN Darlington Power Transistors
New Jersey Semi-Conduct...	MJ10022	102Kb / 2P	NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
	MJ10020	101Kb / 2P	NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
	MJ10005	109Kb / 2P	NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
Continental Device Indi...	MJ10020	1Mb / 10P	NPN Silicon Power DarligtonTransistor with Base-Emitter Speedup Diode 60 AMPERE, 200 AND 250 VOLTS, 250 WATTS Rev0