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Teilenummer	1SS286

Bauteilbeschribung	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Filegröße	27.4 Kbytes

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Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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Ähnliche Beschreibung - 1SS286

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Hitachi Semiconductor	1SS106	26Kb / 5P	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
	1SS198	26Kb / 5P	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
	HSU88	21Kb / 5P	Silicon Schottky Barrier Diode for Various Detector, Mixer
	1SS108	17Kb / 5P	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
	1SS199	17Kb / 5P	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
Renesas Technology Corp	1SS286	65Kb / 5P	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
	1SS106	63Kb / 5P	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
	1SS198	61Kb / 5P	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
	HSM198S	140Kb / 5P	Silicon Schottky Barrier Diode for Various Detector
Hitachi Semiconductor	1SS174	20Kb / 4P	Silicon Schottky Barrier Diode for UHF TV Tuner Mixer, Various Detector, High speed switching