| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 NTE Electronics |
NTE916
|
23Kb / 2P |
Integrated Circuit High Current, NPN Transistor Array, Common Emitter
|
 RF Micro Devices |
RF2131
|
84Kb / 10P |
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER
|
 Agilent(Hewlett-Packard... |
AT-31625
|
117Kb / 10P |
4.8 V NPN Common Emitter Medium Power Output Transistor
|
|
AT-36408
|
104Kb / 8P |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones
|
|
AT-38086
|
130Kb / 10P |
4.8 V NPN Silicon Bipolar Common Emitter Transistor
|
 Rohm |
EMA4
|
1Mb / 10P |
Emitter common Dual digital transistor
|
|
EMA3
|
1Mb / 10P |
Emitter common Dual digital transistor
|
|
EMG3
|
1Mb / 10P |
Emitter common (dual digital transistor)
|
|
EMG4
|
1Mb / 10P |
Emitter common(dual digital transistor)
|
|
EMG5
|
1Mb / 10P |
Emitter common (dual digital transistor)
|