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Teilenummer	NE3514S02

Bauteilbeschribung	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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Hersteller	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Ähnliche Teilenummer - NE3514S02

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
California Eastern Labs	NE3514S02	269Kb / 8P	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
	NE3514S02	285Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
	NE3514S02-T1C	269Kb / 8P	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
	NE3514S02-T1C	285Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
	NE3514S02-T1C-A	269Kb / 8P	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	NE334S01	74Kb / 12P	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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California Eastern Labs	NE3514S02	269Kb / 8P	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE350184C	269Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3517S03	208Kb / 11P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
California Eastern Labs	NE23383	26Kb / 3P	SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET
	NE425S01	52Kb / 5P	C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
	NE3517S03	310Kb / 8P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
Renesas Technology Corp	NE3517S03	208Kb / 11P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET