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Teilenummer	NE55410GR

Bauteilbeschribung	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

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Hersteller	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Ähnliche Teilenummer - NE55410GR

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
California Eastern Labs	NE55410GR	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR-T3-AZ	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR-T3-AZ	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR	580Kb / 14P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	NE6500496	37Kb / 6P	4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC	NE6501077	37Kb / 6P	10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Sanyo Semicon Device	LA4278	74Kb / 6P	10 W 2-Channel Power Amplifier
California Eastern Labs	NE55410GR	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR	580Kb / 14P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NES1823S-45	239Kb / 10P	GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET 2004
	NES1823S-90	242Kb / 10P	GaAs FET 90 W L, S-BAND SINGLE-END POWER GaAs FET 2004