| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 NXP Semiconductors |
06035J0R4BBS
|
468Kb / 15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |
|
06035J0R6BS
|
497Kb / 16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016 |
 TriQuint Semiconductor |
06035J0R7ABSTR
|
747Kb / 8P |
Edge QAM Gain Stage
|
 NXP Semiconductors |
06035J0R7BBS
|
468Kb / 15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |
|
06035J0R8BBS
|
468Kb / 15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |