3DD15B pdf, 3DD15B Bauteilbeschribung, 3DD15B Datenblatt, 3DD15B view ::: ALLDATASHEET :::

Teilenummer	3DD15B

Bauteilbeschribung	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Ähnliche Teilenummer - 3DD15B

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Inchange Semiconductor ...	3DD15	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
Inchange Semiconductor ...	3DD155	300Kb / 2P	isc Silicon NPN Power Transistor
JILIN SINO-MICROELECTRO...	3DD1555	150Kb / 6P	CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
Inchange Semiconductor ...	3DD1555	267Kb / 2P	isc Silicon NPN Power Transistor
JILIN SINO-MICROELECTRO...	3DD1555-O-A-N-D	150Kb / 6P	CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Inchange Semiconductor ...	2SA1080	98Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
	2SA652	82Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)
	3DD101A	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
	3DD325	195Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	3DD15	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
	3DD7B	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min)
	3DD8B	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	BD954	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min)
	BUY55	192Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 125V(Min.)
	BUY77	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO = 250V(Min.)