| Datenblatt-Suchmaschine für elektronische Bauteile |
|
190CF Verteiler |
| Verteiler | Teilenummer | Hersteller | Bauteilbeschribung | Price | Qty. BuyNow | |
![]() DigiKey | IPBE65R190CFD7AATMA1 | Rochester Electronics LLC | IPBE65R190 - 650V COOLMOS N-CHAN |
| 9,670 | |
| IPT65R190CFD7XTMA1 | Infineon Technologies AG | MOSFET N-CH 650V 8HSOF RoHS : Compliant |
| 1,140 | ||
| IPA65R190CFDXKSA2 | Infineon Technologies AG | MOSFET N-CH 650V 17.5A TO220 RoHS : Compliant |
| 989 | ||
| IPW65R190CFDFKSA2 | Infineon Technologies AG | MOSFET N-CH 650V 17.5A TO247-3 RoHS : Compliant |
| 981 | ||
IPB65R190CFDAATMA1![]() | Infineon Technologies AG | MOSFET N-CH 650V 17.5A D2PAK RoHS : Compliant |
| 916 | ||
IPB65R190CFDAATMA1![]() | Infineon Technologies AG | MOSFET N-CH 650V 17.5A D2PAK RoHS : Compliant |
| 916 | ||
IPB65R190CFDAATMA1![]() | Infineon Technologies AG | MOSFET N-CH 650V 17.5A D2PAK RoHS : Compliant |
| 916 | ||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | MOSFET N-CH 650V 14A TO263-3 RoHS : Compliant |
| 905 | ||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | MOSFET N-CH 650V 14A TO263-3 RoHS : Compliant |
| 905 | ||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | MOSFET N-CH 650V 14A TO263-3 RoHS : Compliant |
| 905 | ||
| IPP65R190CFDXKSA2 | Infineon Technologies AG | MOSFET N-CH 650V 17.5A TO220-3 RoHS : Compliant |
| 883 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | MOSFET N-CH 650V 17.5A TO263-3 RoHS : Compliant |
| 453 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | MOSFET N-CH 650V 17.5A TO263-3 RoHS : Compliant |
| 453 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | MOSFET N-CH 650V 17.5A TO263-3 RoHS : Compliant |
| 453 | ||
| IPP65R190CFD7AAKSA1 | Infineon Technologies AG | MOSFET N-CH 650V 14A TO220-3 RoHS : Compliant |
| 19 | ||
![]() Avnet Americas | IPT65R190CFD7XTMA1 | Infineon Technologies AG | Transistor MOSFET 650V 4-Pin TOLL - Tape and Reel (Alt: IPT65R190CFD7XTMA1) RoHS : Compliant |
| 2,000 | |
| IPA65R190CFDXKSA2 | Infineon Technologies AG | Power MOSFET, N Channel, 650 V, 17.5 A, 0.171 ohm, TO-220FP, Through Hole - Rail/Tube (Alt: IPA65R190CFDXKSA2) RoHS : Compliant |
| 650 | ||
IPB65R190CFDAATMA1![]() | Infineon Technologies AG | MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPB65R190CFDAATMA1) RoHS : Compliant |
| 0 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | Power MOSFET, N Channel, 650 V, 17.5 A, 0.171 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB65R190CFDATMA2) RoHS : Compliant |
| 0 | ||
| IPB65R190CFD7AXTMA1 | Infineon Technologies AG | - Tape and Reel (Alt: IPB65R190CFD7AXTMA1) RoHS : Compliant | 0 | |||
| IPBE65R190CFD7AATMA1 | Infineon Technologies AG | - Tape and Reel (Alt: IPBE65R190CFD7AATMA1) RoHS : Compliant |
| 0 | ||
| IPP65R190CFDXKSA2 | Infineon Technologies AG | Power MOSFET, N Channel, 650 V, 17.5 A, 0.171 ohm, TO-220, Through Hole - Rail/Tube (Alt: IPP65R190CFDXKSA2) RoHS : Compliant |
| 0 | ||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | Transistor MOSFET N-Channel 650V 14A 3-Pin D2PAK T/R - Tape and Reel (Alt: IPB65R190CFD7AATMA1) RoHS : Compliant |
| 0 | ||
| IPP65R190CFD7AAKSA1 | Infineon Technologies AG | Power MOSFET, N Channel, 650 V, 14 A, 0.159 ohm, TO-220, Through Hole - Rail/Tube (Alt: IPP65R190CFD7AAKSA1) RoHS : Compliant |
| 0 | ||
IPW65R190CFDFKSA1![]() | Infineon Technologies AG | Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R190CFDFKSA1) RoHS : Compliant | 0 | |||
| IPW65R190CFD7AXKSA1 | Infineon Technologies AG | Power MOSFET, N Channel, 650 V, 14 A, 0.159 ohm, TO-247, Through Hole - Rail/Tube (Alt: IPW65R190CFD7AXKSA1) RoHS : Compliant |
| 0 | ||
| CCP2B-1-90CF | Eaton Corporation | - Bulk (Alt: CCP2B-1-90CF) RoHS : Not Compliant |
| 0 | ||
IPA65R190CFDXKSA1![]() | Infineon Technologies AG | Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: IPA65R190CFDXKSA1) RoHS : Compliant | 0 | |||
| IPP65R190CFD7XKSA1 | Infineon Technologies AG | Transistor MOSFET N-Channel 650V 12A 3-Pin PG-TO-220 Tube - Rail/Tube (Alt: IPP65R190CFD7XKSA1) RoHS : Compliant |
| 0 | ||
| IPW65R190CFDFKSA2 | Infineon Technologies AG | Trans MOSFET N-CH 650V 17.5A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R190CFDFKSA2) RoHS : Compliant |
| 0 | ||
![]() Mouser Electronics | IPW65R190CFDFKSA2 | Infineon Technologies AG | MOSFETs HIGH POWER_LEGACY RoHS : Compliant |
| 7,139 | |
| IPA65R190CFDXKSA2 | Infineon Technologies AG | MOSFETs HIGH POWER_LEGACY RoHS : Compliant |
| 1,767 | ||
| IPBE65R190CFD7AATMA1 | Infineon Technologies AG | MOSFETs AUTOMOTIVE_COOLMOS RoHS : Compliant |
| 860 | ||
| IPP65R190CFD7AAKSA1 | Infineon Technologies AG | MOSFETs AUTOMOTIVE_COOLMOS RoHS : Compliant |
| 850 | ||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | MOSFETs AUTOMOTIVE_COOLMOS RoHS : Compliant |
| 812 | ||
| IPB65R190CFDAATMA1 | Infineon Technologies AG | MOSFETs N-Ch 650V 57.2A D2PAK-2 RoHS : Compliant |
| 775 | ||
| IPP65R190CFD7XKSA1 | Infineon Technologies AG | MOSFETs HIGH POWER_NEW RoHS : Compliant |
| 159 | ||
| IPB65R190CFDA | Infineon Technologies AG | MOSFETs N-Ch 650V 57.2A D2PAK-2 RoHS : Compliant |
| 0 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | MOSFETs HIGH POWER_LEGACY RoHS : Compliant |
| 0 | ||
| IPP65R190CFDXKSA2 | Infineon Technologies AG | MOSFETs HIGH POWER_LEGACY RoHS : Compliant |
| 0 | ||
| IPW65R190CFD7AXKSA1 | Infineon Technologies AG | MOSFETs AUTOMOTIVE_COOLMOS RoHS : Compliant |
| 0 | ||
| IPT65R190CFD7XTMA1 | Infineon Technologies AG | MOSFETs HIGH POWER_NEW RoHS : Compliant |
| 0 | ||
| CCP2B-1-90CF | Eaton Corporation | Disconnect Switches 1 Pole Comp Ckt Protect 90A RoHS : Compliant |
| 0 | ||
![]() Newark | IPT65R190CFD7XTMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 16A, HSOF; RoHS : Compliant |
| 1,995 | |
| IPT65R190CFD7XTMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 16A, HSOF; RoHS : Compliant |
| 1,995 | ||
IPB65R190CFDAATMA1![]() | Infineon Technologies AG | MOSFET SINGLE, 17.5A, 650V, 151W; RoHS : Compliant |
| 1,008 | ||
IPB65R190CFDAATMA1![]() | Infineon Technologies AG | MOSFET SINGLE, 17.5A, 650V, 151W; RoHS : Compliant |
| 1,008 | ||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 14A, TO-263; RoHS : Compliant |
| 910 | ||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 14A, TO-263; RoHS : Compliant |
| 910 | ||
| IPW65R190CFDFKSA2 | Infineon Technologies AG | MOSFET, N-CH, 650V, 17.5A, TO-247-3; RoHS : Compliant |
| 240 | ||
| IPP65R190CFDXKSA2 | Infineon Technologies AG | MOSFET, N-CH, 650V, 17.5A, TO-220; RoHS : Compliant |
| 196 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | MOSFET, N-CH, 650V, 17.5A, TO-263; RoHS : Compliant |
| 0 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | MOSFET, N-CH, 650V, 17.5A, TO-263; RoHS : Compliant |
| 0 | ||
| IPP65R190CFD7XKSA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 12A, TO-220; RoHS : Compliant |
| 0 | ||
| IPP65R190CFD7AAKSA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 14A, TO-220; RoHS : Compliant |
| 0 | ||
| IPW65R190CFD7AXKSA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 14A, TO-247; RoHS : Compliant |
| 0 | ||
| IPBE65R190CFD7AATMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 14A, TO-263; RoHS : Compliant |
| 0 | ||
| IPBE65R190CFD7AATMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 14A, TO-263; RoHS : Compliant |
| 0 | ||
![]() RS | US-3190-CF | Bimba Manufacturing Company | CYLINDER, ULTRAN RODLESS SILVER COUPLING STRENGTH US; 2IN BORE ; STROKE: 90 INC |
| 0 | |
| UG-3190-CF | Bimba Manufacturing Company | CYLINDER, ULTRAN RODLESS GOLD COUPLING STRENGTH; 2IN BORE ; STROKE: 90 INCH(S); |
| 0 | ||
| CCPB-1-90CF | Eaton Bussmann | CIRCUIT PROTECTOR BASE 1-POLE 90A BUSSMANN FUSIBLE PANELBOARDS, CCPB SERIES |
| 0 | ||
| CCP2B-1-90CF | Eaton Bussmann | COMPACT CIRCUIT PROTECTOR;BOLT-ON;USE W/ QSCP;CUBEFUSE;90A;1 POLE |
| 0 | ||
![]() Rochester Electronics | IPB65R190CFD7AATMA1 | Infineon Technologies AG | IPB65R190CFD7A - Automotive_COOLMOS RoHS : Compliant |
| 1,359 | |
IPB65R190CFDATMA1![]() | Infineon Technologies AG | IPB65R190CFD - HIGH POWER_LEGACY RoHS : Compliant |
| 147,793 | ||
| IPBE65R190CFD7AATMA1 | Infineon Technologies AG | IPBE65R190 - 650V CoolMOS N-channel automotive SJ power MOSFET CFD7A RoHS : Compliant |
| 10,618 | ||
IPI65R190CFDXKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant |
| 19,865 | ||
| IPI65R190CFDXKSA2 | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant |
| 2,000 | ||
| IPP65R190CFD7AAKSA1 | Infineon Technologies AG | IPP65R190 - CoolMOS N-Channel Power MOSFET RoHS : Compliant |
| 212 | ||
IPP65R190CFDXKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant |
| 1,000 | ||
| IPP65R190CFDXKSA2 | Infineon Technologies AG | MOSFET N-Channel 650V 17.5A (Tc) TO-220-3 Tube RoHS : Compliant |
| 55 | ||
| IPT65R190CFD7XTMA1 | Infineon Technologies AG | IPT65R190CFD7 - HIGH POWER_NEW RoHS : Compliant |
| 4,446 | ||
IPW65R190CFDAFKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS : Compliant |
| 55 | ||
IPW65R190CFDFKSA1![]() | Infineon Technologies AG | IPW65R190 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS : Compliant |
| 240 | ||
![]() TME | IPB65R190CFDATMA1![]() | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3 RoHS : Compliant |
| 0 | |
| IPW65R190CFDFKSA2 | Infineon Technologies AG | Transistor: N-MOSFET; 650V; 17.5A; 151W; TO247-3; 120ns RoHS : Compliant |
| 0 | ||
IPB65R190CFDAATMA1![]() | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263 RoHS : Compliant |
| 0 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | Transistor: N-MOSFET; 650V; 17.5A; 151W; D2PAK,TO263AB RoHS : Compliant |
| 0 | ||
| IPT65R190CFD7XTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPBE65R190CFD7AATMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPP65R190CFDXKSA2 | Infineon Technologies AG | Transistor: N-MOSFET; 650V; 17.5A; 151W; TO220-3; 120ns RoHS : Compliant |
| 0 | ||
IPI65R190CFDXKSA1![]() | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3 RoHS : Compliant |
| 0 | ||
| IPP65R190CFD7AAKSA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
IPA65R190CFDXKSA1![]() | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP RoHS : Compliant |
| 0 | ||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPW65R190CFD7AXKSA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPA65R190CFDXKSA2 | Infineon Technologies AG | Transistor: N-MOSFET; 650V; 17.5A; 34W; TO220FP; 120ns RoHS : Compliant |
| 0 | ||
IPW65R190CFDFKSA1![]() | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3 RoHS : Compliant |
| 0 | ||
| IPP65R190CFD7XKSA1 | Infineon Technologies AG | Transistor: N-MOSFET |
| 0 | ||
![]() Rutronik | IPP65R190CFDXKSA2 | Infineon Technologies AG | N-CH 650V 17,5A 171mOhm TO-220 RoHS : Compliant |
| 450 | |
| IPA65R190CFDXKSA2 | Infineon Technologies AG | N-CH 650V 17,5A 190mOhm TO220FP RoHS : Compliant |
| 200 | ||
| IPBE65R190CFD7AATMA1 | Infineon Technologies AG | N-CH 650V 14A 159mOhm TO-263-7 RoHS : Compliant |
| 50 | ||
| IPW65R190CFD7AXKSA1 | Infineon Technologies AG | N-CH 650V 14A 159mOhm TO-247 RoHS : Compliant |
| 20 | ||
![]() EBV Elektronik | IPP65R190CFDXKSA2 | Infineon Technologies AG | Power MOSFET N Channel 650 V 175 A 0171 ohm TO220 Through Hole (Alt: SP001987350) RoHS : Compliant | 4,000 | ||
| IPB65R190CFDATMA2 | Infineon Technologies AG | Power MOSFET N Channel 650 V 175 A 0171 ohm TO263 D2PAK Surface Mount (Alt: SP001977038) RoHS : Compliant | 0 | |||
| IPA65R190CFDXKSA2 | Infineon Technologies AG | Power MOSFET N Channel 650 V 175 A 0171 ohm TO220FP Through Hole (Alt: SP001977024) RoHS : Compliant | 0 | |||
| IPW65R190CFDFKSA2 | Infineon Technologies AG | Trans MOSFET NCH 650V 175A 3Pin TO247 Tube (Alt: SP001987376) RoHS : Compliant | 0 | |||
IPW65R190CFDFKSA1![]() | Infineon Technologies AG | Trans MOSFET NCH 650V 175A 3Pin3Tab TO247 (Alt: SP000905376) RoHS : Compliant | 0 | |||
IPA65R190CFDXKSA1![]() | Infineon Technologies AG | Trans MOSFET NCH 650V 175A 3Pin3Tab TO220 FullPack (Alt: SP000905382) RoHS : Compliant | 0 | |||
IPB65R190CFDAATMA1![]() | Infineon Technologies AG | MOS Power Transistors HV 200V (Alt: SP000928264) RoHS : Compliant | 0 | |||
IPW65R190CFDAFKSA1![]() | Infineon Technologies AG | MOS Power Transistors HV 200V (Alt: SP000928268) RoHS : Compliant | 0 | |||
IPP65R190CFDAAKSA1![]() | Infineon Technologies AG | MOS Power Transistors HV 200V (Alt: SP000928266) RoHS : Compliant | 0 | |||
| IPP65R190CFD7XKSA1 | Infineon Technologies AG | Transistor MOSFET NChannel 650V 12A 3Pin PGTO220 Tube (Alt: SP005413377) RoHS : Compliant | 0 | |||
| IPB65R190CFD7AATMA1 | Infineon Technologies AG | Transistor MOSFET NChannel 650V 14A 3Pin D2PAK TR (Alt: SP005550320) RoHS : Compliant | 0 | |||
| IPP65R190CFD7AAKSA1 | Infineon Technologies AG | Power MOSFET N Channel 650 V 14 A 0159 ohm TO220 Through Hole (Alt: SP005399500) RoHS : Compliant | 0 | |||
![]() Neutron USA | CCP2B-1-90CF | Eaton Bussmann | Compact Circuit Protector;Bolt-On;Use W/ QSCP;CUBEFuse;90A;1 Pole |
| 0 | |
![]() Sager | CCPB-1-90CF | Eaton Bussmann | Circuit Breakers CCP BASE, 1 POLE, 90A CF PANEL BOARD | 0 | ||
| CCP2B-1-90CF | Eaton Bussmann | Disconnect Switches 1 Pole Comp Ckt Protect 90A |
| 0 | ||
![]() Vyrian | IPB65R190CFDATMA2 | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 12,651 | ||
IPP65R190CFDXKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 10,979 | |||
| IPA65R190CFDXKSA2 | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 8,588 | |||
| IPP65R190CFDXKSA2 | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 6,546 | |||
IPW65R190CFDAFKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS : Compliant | 6,156 | |||
| EP2AGX190CF29I5N | Altera Corporation | Field Programmable Gate Array, 500MHz, PBGA780 RoHS : Compliant | 3,788 | |||
| EP2AGX190CF29I3 | Altera Corporation | Field Programmable Gate Array RoHS : Not Compliant | 3,273 | |||
| EP2AGX190CF29C5N | Altera Corporation | Field Programmable Gate Array, 500MHz, PBGA780 RoHS : Compliant | 3,187 | |||
| EP2AGX190CF29C5 | Altera Corporation | Field Programmable Gate Array RoHS : Not Compliant | 2,534 | |||
| EP2AGX190CF29I5 | Altera Corporation | Field Programmable Gate Array RoHS : Not Compliant | 2,162 | |||
| EP2AGX190CF35I3 | Altera Corporation | Field Programmable Gate Array RoHS : Not Compliant | 1,711 | |||
| EP2AGX190CF35C5 | Altera Corporation | Field Programmable Gate Array RoHS : Not Compliant | 1,316 | |||
IPI65R190CFD![]() | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 682 | |||
| IPP65R190CFD7A | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 450 | |||
IPP65R190CFD![]() | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 367 |
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