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BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

1090 MP

90 Watts, 50 Volts, Pulsed

Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION

The 1090MP is a COMMON BASE bipolar transistor. It is designed for

pulsed systems in the frequency band 1025-1150 MHz. The transistor

includes input prematch for broadband capability. The device has gold thin-

film metallization for proven highest MTTF. Low thermal resistance package

reduces junction temperature, extends life.

CASE OUTLINE

55FU, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

250 Watts Peak

o2

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

60 Volts

BVebo

Emitter to Base Voltage

4.0 Volts

Ic

Collector Current

6.0 Amps Peak

Maximum Temperatures

Storage Temperature

- 65 to +150 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST

CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

η

c

VSWR

Broadband Power Out

Power Input

Broadband Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 1025-1150 MHz

Vcc = 50 Volts

PW = 10

µsec

DF =1%

F = 1090 MHz

90

8.0

35

98

8.5

38

14

10:1

Watts

Watts

d B

%

BVebo

BVces

Cob

Emitter to Base Breakdown

Collector to Emitter Breakdown

Capacitance Collector to Base

DC - Current Gain

Thermal Resistance

Ie = 1 mA

Ie = 10 mA

Vcb = 50 V

Ic= 500mA,Vcc= 5V

Tc=25

C

3.5

65

15

16

120

0.6

Volts

Volts

pF

C/W

o

Note1: At Rated Power Output and pulse conditions

.

2: Maximum Ratings are for RF Amplifier Operation

Issue Aug 1996