BAP142L datasheet(4/8 Pages) PHILIPS

4 / 8 page

9397 750 13056

Preliminary data sheet

Rev. 01 — 27 May 2004

4 of 8

Philips Semiconductors

BAP142L

Silicon PIN diode

f = 100 MHz; Tj =25 °C.

f = 1 MHz; Tj =25 °C.

Fig 1.

Forward resistance as a function of forward

current; typical values.

Fig 2.

Diode capacitance as a function of reverse

voltage; typical values.

(1) IF = 100 mA.

(2) IF =10mA.

(3) IF = 1 mA.

(4) IF = 0.5 mA.

Diode inserted in series with a 50

Ω stripline circuit

and biased via the analyzer Tee network;

Tamb =25 °C.

Diode zero biased and inserted in a 50

Ω microstrip

circuit; Tamb =25 °C.

Fig 3.

Insertion loss (

|s21|2) of the diode as a function

of frequency; typical values.

Fig 4.

Isolation (

|s21|2) of the diode as a function of

frequency; typical values.

IF (mA)

10-1

102

001aaa693

102

(

Ω)

10−1

VR (V)

020

510

001aaa694

100

200

300

(fF)

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f (GHz)

−0.6

−0.4

−0.8

−0.2

s21 2

(dB)

−1

(2)

(4)

(1)

(3)

001aaa696

f (GHz)

−30

−20

−40

−10

−50

s21 2

(dB)

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