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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFS3207 Datenblatt(PDF) 1 Page - International Rectifier |
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IRFS3207 Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 11 page  11/3/04 Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96893A www.irf.com 1 D2Pak IRFS3207 TO-220AB IRFB3207 TO-262 IRFSL3207 IRFB3207 IRFS3207 IRFSL3207 HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G S D G S D G S D G VDSS 75V RDS(on) typ. 3.6m : max. 4.5m : ID 180A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dV/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.45 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 k ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk ––– 40 910 See Fig. 14, 15, 16a, 16b, 330 5.8 -55 to + 175 ± 20 2.2 10lb xin (1.1Nxm) 300 Max. 180 c 130 c 720 |
Ähnliche Teilenummer - IRFS3207 |
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Ähnliche Beschreibung - IRFS3207 |
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