TS19705CX6

Taiwan Semiconductor

3

Version: C1607

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNIT

GM Amplifier

Transconductance

--

60

--

µA/V

Source current

--

20

--

µA

MOSFET Section

Dropout voltage

--

1.2

1.5

V

--

0.12

--

V

Rising time

--

40

--

ns

Falling time

--

80

--

ns

Output clamp voltage

--

--

19

V

Leading edge blanking time

--

0.5

--

µs

Note:

1.

Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for

stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational

sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may

remain possibility to affect device reliability.

2.

Devices are ESD sensitive. Handing precaution recommended.

3.

Thermal Resistance is specified with the component mounted on a low effective thermal conductivity test board in free air at

4.

The device is not guaranteed to function outside its operating conditions.

5.

Guaranteed by design.

6.

Auto Recovery Type.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TS19705CX6 RFG

SOT-26

3,000pcs / 7”Reel