Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

DMNH4015SSD Datenblatt(PDF) 3 Page - Diodes Incorporated

Teilenummer DMNH4015SSD
Bauteilbeschribung  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH4015SSD Datenblatt(HTML) 3 Page - Diodes Incorporated

  DMNH4015SSD Datasheet HTML 1Page - Diodes Incorporated DMNH4015SSD Datasheet HTML 2Page - Diodes Incorporated DMNH4015SSD Datasheet HTML 3Page - Diodes Incorporated DMNH4015SSD Datasheet HTML 4Page - Diodes Incorporated DMNH4015SSD Datasheet HTML 5Page - Diodes Incorporated DMNH4015SSD Datasheet HTML 6Page - Diodes Incorporated DMNH4015SSD Datasheet HTML 7Page - Diodes Incorporated DMNH4015SSD Datasheet HTML 8Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
DMNH4015SSD
Document number: DS38105 Rev. 1 - 2
3 of 8
www.diodes.com
July 2016
© Diodes Incorporated
DMNH4015SSD
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
40
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS


1
µA
VDS = 40V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1
3
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
10
15
m
Ω
VGS = 10V, ID = 12A
12
20
VGS = 4.5V, ID = 10A
Diode Forward Voltage
VSD
0.7
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
CISS
1,938
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
COSS
156
Reverse Transfer Capacitance
CRSS
126
Gate Resistance
RG

1.8

Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
QG
15
nC
VDS = 15V, ID = 12A
Total Gate Charge (VGS = 10V)
QG

33

Gate-Source Charge
QGS
4.4
Gate-Drain Charge
QGD
5.9
Turn-On Delay Time
tD(ON)
4.4
ns
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω,
Turn-On Rise Time
tR
10.5
Turn-Off Delay Time
tD(OFF)
12.3
Turn-Off Fall Time
tF

5.7

Body Diode Reverse Recovery Time
tRR

11

ns
IS = 12A, di/dt = 500A/μs
Body Diode Reverse Recovery Charge
QRR

7.6

nC
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



Html Pages

1 2 3 4 5 6 7 8


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com