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DMNH4026SSD Datenblatt(PDF) 4 Page - Diodes Incorporated

Teilenummer DMNH4026SSD
Bauteilbeschribung  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH4026SSD Datenblatt(HTML) 4 Page - Diodes Incorporated

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DMNH4026SSD
Document number: DS38682 Rev. 1 - 2
4 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMNH4026SSD
0.005
0.01
0.015
0.02
0.025
0.03
0.035
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 10V, ID = 6A
V
GS = 4.5V, ID = 5A
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125
oC
V
GS = 0V
T
J = 85
oC
T
J = 25
oC
T
J = -55
oC
V
GS = 0V
T
J = 150
oC
T
J = 175
oC
10
100
1000
10000
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
20
Qg (nC)
Figure 11. Gate Charge
V
DS = 20V, ID = 8.0A
0.01
0.1
1
10
100
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10s
P
W =10ms
P
W =100µs
DC
R
DS(ON) Limited
P
W =1ms
P
W =100ms
T
J(Max) = 175℃
T
C = 25℃
Single Pulse
DUT on 1*MRP Board
V
GS= 10V
P
W =1s
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA



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