| Datenblatt-Suchmaschine für elektronische Bauteile |
|
PMEG2005EB Datenblatt(PDF) 4 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
PMEG2005EB Datenblatt(HTML) 4 Page - NXP Semiconductors |
|
4 / 8 page ![]() 2003 Dec 03 4 Philips Semiconductors Product specification 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 0.1 mA 30 60 mV IF = 1 mA 80 110 mV IF = 10 mA 140 190 mV IF = 100 mA 230 290 mV IF = 1000 mA 510 620 mV IR continuous reverse current VR = 10 V; note 1 0.17 0.6 mA VR = 20 V; note 1 0.32 1.5 mA Cd diode capacitance VR = 1 V; f = 1 MHz 19 25 pF |
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |