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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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AM29DL32XG Datenblatt(PDF) 25 Page - Advanced Micro Devices |
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AM29DL32XG Datenblatt(HTML) 25 Page - Advanced Micro Devices |
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25 / 58 page  February 9, 2005 Am29DL32xG 23 DA TA SH EET Table 11. System Interface String Table 12. Device Geometry Definition Addresses (Word Mode) Addresses (Byte Mode) Data Description 1Bh 36h 0027h V CC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 38h 0036h V CC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 3Ah 0000h V PP Min. voltage (00h = no VPP pin present) 1Eh 3Ch 0000h V PP Max. voltage (00h = no VPP pin present) 1Fh 3Eh 0004h Typical timeout per single byte/word write 2 N µs 20h 40h 0000h Typical timeout for Min. size buffer write 2 N µs (00h = not supported) 21h 42h 000Ah Typical timeout per individual block erase 2 N ms 22h 44h 0000h Typical timeout for full chip erase 2 N ms (00h = not supported) 23h 46h 0005h Max. timeout for byte/word write 2 N times typical 24h 48h 0000h Max. timeout for buffer write 2 N times typical 25h 4Ah 0004h Max. timeout per individual block erase 2 N times typical 26h 4Ch 0000h Max. timeout for full chip erase 2 N times typical (00h = not supported) Addresses (Word Mode) Addresses (Byte Mode) Data Description 27h 4Eh 0016h Device Size = 2 N byte 28h 29h 50h 52h 0002h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 54h 56h 0000h 0000h Max. number of bytes in multi-byte write = 2 N (00h = not supported) 2Ch 58h 0002h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 003Eh 0000h 0000h 0001h Erase Block Region 2 Information 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0000h 0000h 0000h 0000h Erase Block Region 3 Information 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h Erase Block Region 4 Information |
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