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DXT5551 Datenblatt(PDF) 2 Page - Diodes Incorporated

Teilenummer DXT5551
Bauteilbeschribung  160V NPN TRANSISTOR
PDF  6 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DXT5551 Datenblatt(HTML) 2 Page - Diodes Incorporated

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DXT5551
Document number: DS31225 Rev. 4 - 2
2 of 6
www.diodes.com
April 2017
© Diodes Incorporated
DXT5551
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
0.75
W
(Note 6)
1.2
Thermal Resistance, Junction to Ambient Air
(Note 5)
RJA
166
°C/W
(Note 6)
104
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the exposed collector pad on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB;
device is measured under still air conditions whilst operating in a steady-state.
6. Same as note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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