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DXT5551 Datenblatt(PDF) 2 Page - Diodes Incorporated |
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DXT5551 Datenblatt(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page ![]() DXT5551 Document number: DS31225 Rev. 4 - 2 2 of 6 www.diodes.com April 2017 © Diodes Incorporated DXT5551 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 0.75 W (Note 6) 1.2 Thermal Resistance, Junction to Ambient Air (Note 5) RJA 166 °C/W (Note 6) 104 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. |
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