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NTE378 Datenblatt(PDF) 1 Page - NTE Electronics

Teilenummer NTE378
Bauteilbeschribung  Silicon Complementary Transistors Power Amp Driver, Output, Switch
PDF  2 Pages
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Hersteller  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE378 Datenblatt(HTML) 1 Page - NTE Electronics

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NTE377 (NPN) & NTE378 (PNP)
Silicon Complementary Transistors
Power Amp Driver, Output, Switch
Description:
The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for general purpose power amplification and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Features:
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ 8A
D Fast Switching Speeds
D Complementary Pairs Simplifies Designs
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, PD
TC = +25°C
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C
1.67W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RΘJC
2.5
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RΘJA
75
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL
+275
°C
. . . . . . . . . . . . . .
Note 1. Pulse Width
≤ 6ms, Duty Cycle ≤ 50%.


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