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AMMC-6241 Datenblatt(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMC-6241 Datenblatt(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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2 / 8 page ![]() 2 AMMC-6241 DC Specifications/Physical Properties [1] Symbol Parameters and Test Conditions Units Min. Typ. Max. Id Drain Supply Current (under any RF power drive and temperature) (Vd=3.0 V) mA 60 80 qch-b Thermal Resistance[2] (Backside temperature, Tb = 25°C) °C/W 25 AMMC-6241 RF Specifications [3, 4, 5] TA= 25°C, Vd=3.0 V, Id(Q)=60 mA, Zin=Zo=50 Ω Symbol Parameters andTest Conditions Units Minimum Typical Maximum Sigma Gain Small-signal Gain[6] dB 26-35 GHz = 20 35-40 GHz = 18.5 26-37 GHz = 21 37-40 GHz = 19.5 1.0 NF Noise Figure into 50W dB 26-37 GHz = 2.7 37-40 GHz = 3.0 26-37 GHz = 3.0 37-40 GHz = 3.3 0.05 P-1dB Output Power at 1dBGain Com- pression dBm +10 OIP3 Third Order Intercept Point; Df=100MHz; Pin=-35dBm dBm +20 RLin Input Return Loss[6] dB -13 -11 0.40 RLout Output Return Loss[6] dB -16 -12 0.50 Isol Reverse Isolation[6] dB -40 0.50 Notes: 1. Ambient operational temperature TA=25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (qch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. 3. Small/Large -signal data measured in wafer form TA = 25°C. 4. 100% on-wafer RF test is done at frequency =30, 32, and 38 GHz. 5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching. 6. As derived from measured s-parameters Noise Figure at 32 GHz Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several production lots. Gain at 38 GHz Noise Figure at 38GHz LSL 19 20 USL 2.6 2.7 2.8 2.9 USL 2.8 2.9 3 3.1 3.2 3.3 |
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