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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFS41N15DPbF Datenblatt(PDF) 2 Page - Infineon Technologies AG |
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IRFS41N15DPbF Datenblatt(HTML) 2 Page - Infineon Technologies AG |
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2 / 13 page  IRFB/IB/S/SL41N15DPbF 2 2017-04-27 Notes: Repetitive rating; pulse width limited by max. junction temperature. starting TJ = 25°C, L = 1.5mH, RG = 25, IAS = 25A. ISD 25A, di/dt 340A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. This is only applied to TO-220AB package. This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.045 VGS = 10V, ID = 25A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 150 V, VGS = 0V ––– ––– 250 VDS = 120V,VGS = 0V,TJ =150°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 30V Gate-to-Source Reverse Leakage ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Forward Trans conductance 18 ––– ––– S VDS = 50V, ID = 25A Qg Total Gate Charge ––– 72 110 ID = 25A Qgs Gate-to-Source Charge ––– 21 31 VDS = 120V Qgd Gate-to-Drain Charge ––– 35 52 VGS = 10V td(on) Turn-On Delay Time ––– 16 ––– ns VDD = 75V tr Rise Time ––– 63 ––– ID = 25A td(off) Turn-Off Delay Time ––– 25 ––– RG= 2.5 tf Fall Time ––– 14 ––– VGS = 10V Ciss Input Capacitance ––– 2520 ––– pF VGS = 0V Coss Output Capacitance ––– 510 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz Coss Output Capacitance ––– 3090 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz Coss Output Capacitance ––– 230 ––– VGS = 0V, VDS = 120V ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 250 ––– VGS = 0V, VDS = 0V to 120V nC Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 41 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 164 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 25A,VGS = 0V trr Reverse Recovery Time ––– 170 260 ns TJ = 25°C ,IF = 25A Qrr Reverse Recovery Charge ––– 1.3 1.9 C di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 470 mJ IAR Avalanche Current ––– 25 A EAR Repetitive Avalanche Energy ––– 20 mJ |
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