| Datenblatt-Suchmaschine für elektronische Bauteile |
|
MP171 Datenblatt(PDF) 4 Page - Monolithic Power Systems |
|
|
|||||||||||||||||||||||||||||
MP171 Datenblatt(HTML) 4 Page - Monolithic Power Systems |
|
4 / 20 page ![]() MP171 –NON-ISOLATED OFFLINE REGULATOR MP171 Rev. 1.0 www.MonolithicPower.com 4 9/30/2015 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2015 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VCC = 5.5 V, TJ = -40°C~125°C, min and max are guaranteed by characterization, typical is tested under 25°C, unless otherwise specified. Parameter Symbol Condition Min Typ Max Units Start-up Current Source and Internal MOSFET (DRAIN) Internal regulator supply current Iregulator VCC = 4 V; VDrain = 100 V 2.2 4.1 6 mA DRAIN leakage current ILeak VCC = 5.8 V; VDrain = 400 V 10 17 μA Breakdown voltage V(BR)DSS TJ = 25°C 700 V On resistance Ron TJ = 25°C 20 25 Ω Supply Voltage Management (VCC) VCC level (increasing) where the internal regulator stops VCCOFF 5.4 5.7 6 V VCC level (decreasing) where the internal regulator turns on VCCON 5.1 5.5 5.8 V VCC regulator on and off hysteresis 130 250 mV VCC level (decreasing) where the IC stops VCCstop 3 3.4 3.6 V VCC level (decreasing) where the protection phase ends VCCpro 2 2.5 2.8 V Internal IC consumption ICC fs = 36 kHz, D = 64% 720 μA Internal IC consumption (no switching) ICC 200 µA Internal IC consumption, latch-off phase ICCLATCH VCC = 5.3 V 16 24 μA Internal Current Sense Peak current limit ILimit TJ = 25°C 85 105 125 mA Leading-edge blanking τLEB1 350 ns SCP threshold ISCP TJ = 25°C 220 300 400 mA Leading-edge blanking for SCP (1) τLEB2 180 ns Feedback Input (FB) Minimum off time τminoff 7.5 10 12.5 μs Maximum on time τmanon 13 18 23 μs Primary MOSFET feedback turn-on threshold VFB 2.45 2.55 2.65 V OLP feedback trigger threshold VFB_OLP 1.64 1.74 1.84 V OLP delay time τOLP fs = 36 kHz 175 ms Open-loop detection VOLD 0.4 0.5 0.6 V Thermal Shutdown Thermal shutdown threshold (1) 150 °C Thermal shutdown recovery hysteresis (1) 30 °C NOTE: 1) This parameter is guaranteed by design. |
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |