AF8958C

P & N-Channel 30-V (D-S) MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Jul 16, 2004

3/4

Limits

Symbol

Parameter

Test Conditions

Ch

Min.

Typ.

Max.

Unit

Dynamic

N

-

10.7

26

Total Gate Charge

P

-

10

13

N

-

1.7

-

Gate-Source Charge

P

-

2.2

-

N

-

2.1

-

Gate-Drain Charge

N-Channel

P-Channel

P

-

1.7

-

nC

Switching

N

-

8

16

Turn-On Delay Time

P

-

7

14

N

-

5

10

Rise Time

P

-

13

24

N

-

23

37

Turn-Off Delay Time

P

-

14

25

N

-

3

6

Fall-Time

N-Channel

P-Channel

P

9

17

nS

Note 3: Pulse test: PW < 300us duty cycle < 2%.

Note 4: Guaranteed by design, not subject to production testing.