2

IHW30N110R3

ResonantSwitchingSeries

Rev.2.1,2015-01-26

ReverseconductingIGBTwithmonolithicbodydiode



Features:

•Powerfulmonolithicbodydiodewithlowforwardvoltage

designedforsoftcommutationonly

•Verytightparameterdistribution

•Highruggedness,temperaturestablebehavior

•Easyparallelswitchingcapabilityduetopositivetemperature

•LowEMI

•QualifiedaccordingtoJEDECfortargetapplications

•Pb-freeleadplating;RoHScompliant

•CompleteproductspectrumandPSpiceModels:

http://www.infineon.com/igbt/

Applications:

•Inductivecooking

•Inverterizedmicrowaveovens

•Resonantconverters

•Softswitchingapplications

G

C

E

G

C

E

KeyPerformanceandPackageParameters

Type

Marking

Package

IHW30N110R3

1100V

30A

1.55V

175°C

H30R1103

PG-TO247-3